³Õ±ð²Ô»å´Ç°ù:Ìý
Model:Ìý
Purpose:ÌýShort duration, high-temperature processing ofÌýwafers and pieces
Equipment description:
The AW610 rapid thermal processing (RTP) system uses high intensity visible radiation to heat single wafers for short process periods of time (typically 10 minutes or less) at precisely controlled temperatures up to 800°C. The system is a cold wallÌýquartz chamber inÌýwhich the sampleÌýis heated with top and bottom arrays of high intensity halogen lamps usingÌýclosed-loop temperature control with feedback via aÌýthermocouple. Typical processes for this tool include metal-silicideÌýformation orÌývery thin thermal oxidation. Permitted processes and materials as well as equipment manuals are available on the equipment wiki page.
Gases currently available on this system:
-
N2
-
O2
-
Ar
-
Forming gas (5% H2 / 95% N2)
ÌýSystem features and options:
- System is configured to handle 100 mmÌýand 150 mm Si wafers
- Small pieces may be processed by placing onÌýSi "carrier" wafer or using susceptor
- Communal susceptor is available for the processing of III-V and other exotic materials
- Temperature feedback control via thermocouple only (processes limited to < 800°C)
Note: ÌýPhotoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films.
Allwin rapid thermal annealing system
