³Õ±ð²Ô»å´Ç°ù:Ìý
Model:Ìý
Purpose:ÌýShort duration, high-temperature processing ofÌýwafers and pieces
Equipment description:
The AW610 rapid thermal processing (RTP) system uses high intensity visible radiation to heat single wafers for short process periods of time (typically 10 minutes or less) at precisely controlled temperatures (400°C-1200°C). The system is a cold wallÌýquartz chamber inÌýwhich the sampleÌýis heated viaÌýtop and bottom arrays of high intensity halogen lamps. Temperature is maintained usingÌýclosed-loop temperature control with sample temperature readback byÌýa pyrometer or a thermocouple. Typical processes for this tool include metal-silicide formation, very thin thermal oxidation and relief of ion implantation damage. Permitted processes and materials as well as equipment manuals are available on the equipment wiki page.
Gases currently available on this system:
-
N2
-
O2
-
Ar
ÌýSystem features and options:
- Configured to handle 100 mmÌýand 150 mmÌýdiameter Si wafers
- Small pieces may be processed by placing onÌýSi "carrier" wafer or using susceptor
- Communal susceptorÌýavailable for the processing of III-V and other exotic materials
- Temperature feedback control via thermocouple (processes < 800°C) or pyrometerÌý(processes > 800°C)
Note: ÌýPhotoresist-coated wafers are strictly prohibited since the system supports high temperature processes which are not compatible with photoresist films.
ALLWIN-RTP
